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| CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C228A3 Issued Date : 2003.10.30 Revised Date : Page No. : 1/4 BTN3904A3 Description * The BTN3904A3 is designed for general purpose switching amplifier applications. * Complementary to BTP3906A3. Equivalent Circuit BTN3904A3 TO-92 BBase CCollector EEmitter EBC Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RJA Tj Tstg Limits 60 40 6 200 625 200 150 -55~+150 Unit V V V mA mW C/W C C BTN3904A3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICEX *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min. 60 40 6 0.65 40 70 100 60 30 300 Typ. 0.07 0.13 0.8 0.85 Max. 50 0.2 0.3 0.85 0.95 300 4 Unit V V V nA V V V V MHz pF Spec. No. : C228A3 Issued Date : 2003.10.30 Revised Date : Page No. : 2/4 Test Conditions IC=10A IC=1mA IE=10A VCE=30V, VBE=-3V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=1V, IC=100A VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA VCE=20V, IC=10mA, f=100MHz VCB=5V, IE=0A,f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle2% BTN3904A3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 HFE@VCE=1V Spec. No. : C228A3 Issued Date : 2003.10.30 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=10IB 100 Saturation Voltage---(mV) 0.1 1 10 100 1000 Current Gain---HFE 100 10 10 0.1 Collector Current ---IC(mA) 1 10 100 Collector Current---IC(mA) 1000 Saturation Voltage vs Collector Current 10000 Cutoff Frequency---fT(MHz) Saturation Voltage---(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 10000 VCE=20V 1000 1000 100 0.1 1 10 100 Collector Current ---IC(mA) 1000 100 1 10 Collector Current---IC(mA) 100 Power Derating Curve 700 Power Dissipation---PD(mW) 600 500 400 300 200 100 0 0 50 100 150 200 Ambient Temperature---TA() BTN3904A3 CYStek Product Specification CYStech Electronics Corp. TO-92 Dimension 2 Spec. No. : C228A3 Issued Date : 2003.10.30 Revised Date : Page No. : 4/4 A B 1 2 3 Marking: N3904 3 C D H I E F G 1 Style: Pin 1.Emitter 2.Base 3.Collector 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN3904A3 CYStek Product Specification |
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